Magnetotransport in a pseudomorphic GaAs/Ga0.8In0.2As/Ga0.75Al0.25As heterostructure with a Si δ-doping layer
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چکیده
منابع مشابه
Magnetotransport in a pseudomorphic GaAs/Ga0.8In0.2As/Ga0.75Al0.25As heterostructure with a Si delta -doping layer.
Magnetotransport properties of a pseudomorphic GaAs/ Ga0.8In0.2As/Ga0.75Al0.25As heterostructure are investigated in pulsed magnetic fields up to 50 T and at temperatures of T =1.4 K and 4.2 K. The structure studied consists of a Si δ-layer parallel to a Ga0.8In0.2As quantum well (QW). The dark electron density of the structure is ne = 1.67×1016 m−2. By illumination the density can be increased...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 1995
ISSN: 0163-1829,1095-3795
DOI: 10.1103/physrevb.52.12218